STP20N10 n - channel enhancement mode power mos transistor n typical r ds(on) = 0.09 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram type v dss r ds(on) i d STP20N10 100 v < 0.12 w 20 a 1 2 3 to-220 december 1996 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs = 20 k w )100v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c20a i d drain current (continuous) at t c = 100 o c14a i dm ( ) drain current (pulsed) 80 a p tot total dissipation at t c = 25 o c105w derating factor 0.7 w/ o c t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area 1/9
thermal data r thj-case r thj-amb r thj-amb t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.43 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 20 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 60 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 15 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 14 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a22.94v r ds(on) static drain-source on resistance v gs = 10v i d = 10 a 0.09 0.12 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 20 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 10 a 7 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 800 200 40 1100 300 60 pf pf pf STP20N10 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 3 a r g = 50 w v gs = 10 v (see test circuit, figure 3) 25 75 35 110 ns ns (di/dt) on turn-on current slope v dd = 80 v i d = 20 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 300 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 20 a v gs = 10 v 30 9 11 45 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 80 v i d = 20 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 70 55 130 100 80 185 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 20 80 a a v sd ( * ) forward on voltage i sd = 20 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a di/dt = 100 a/ m s v dd = 20 v t j = 150 o c (see test circuit, figure 5) 125 0.44 7 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating areas thermal impedance STP20N10 3/9
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STP20N10 4/9
capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature turn-on current slope cross-over time turn-off drain-source voltage slope STP20N10 5/9
switching safe operating area accidental overload area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuits fig. 2: unclamped inductive waveforms STP20N10 6/9
fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 3: switching times test circuits for resistive load STP20N10 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP20N10 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . STP20N10 9/9
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